IndiumV3, Main, Repository, bibRecord, 000155

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Identifieur interne : 000155 ( Main/Repository ); précédent : 000154; suivant : 000156

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Auteurs : RBID : Pascal:14-0099356

Descripteurs français

Pascal (Inist)
- Point quantique, Spectre réflexion, Anisotropie, Arséniure d'indium, Semiconducteur, Composé binaire, Arséniure de gallium, As In, InAs, As Ga, GaAs, Composé minéral.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Anisotropy, Binary compounds, Gallium arsenides, Indium arsenides, Inorganic compounds, Quantum dots, Reflection spectrum, Semiconductor materials.

Abstract

The aim of this work is to influence quantum dot (QD) formation by improving the lower and upper InAs/GaAs QD interface quality. QD properties were studied by reflectance anisotropy spectroscopy, atomic force microscopy and high resolution transmission electron microscopy. All structures were prepared by low pressure metal organic vapor phase epitaxy. Concerning the lower interface, a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. Therefore the growth conditions of the QD buffer layer are very important. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. The upper QD interface is formed during the covering process. InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atoms in covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. However, enhanced surfacting of In atoms was observed for GaAsSb SRL. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000012

Links to Exploration step

Pascal:14-0099356

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots</title>
<author><name sortKey="Hospodkova, Alice" uniqKey="Hospodkova A">Alice Hospodkova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics AS CR, v. v. i., Cukrovamická 10</s1>
<s2>162 00 Prague 6</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>162 00 Prague 6</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pangrac, Ji" uniqKey="Pangrac J">Ji Pangrac</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics AS CR, v. v. i., Cukrovamická 10</s1>
<s2>162 00 Prague 6</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>162 00 Prague 6</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zikova, Marketa" uniqKey="Zikova M">Markéta Zikova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics AS CR, v. v. i., Cukrovamická 10</s1>
<s2>162 00 Prague 6</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>162 00 Prague 6</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Oswald, Ji" uniqKey="Oswald J">Ji Oswald</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics AS CR, v. v. i., Cukrovamická 10</s1>
<s2>162 00 Prague 6</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>162 00 Prague 6</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Vyskocil, Jan" uniqKey="Vyskocil J">Jan Vyskocil</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics AS CR, v. v. i., Cukrovamická 10</s1>
<s2>162 00 Prague 6</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>162 00 Prague 6</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Komninou, Philomela" uniqKey="Komninou P">Philomela Komninou</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kioseoglou, Joseph" uniqKey="Kioseoglou J">Joseph Kioseoglou</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Florini, Nikoleta" uniqKey="Florini N">Nikoleta Florini</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hulicius, Eduard" uniqKey="Hulicius E">Eduard Hulicius</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics AS CR, v. v. i., Cukrovamická 10</s1>
<s2>162 00 Prague 6</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>162 00 Prague 6</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0099356</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0099356 INIST</idno>
<idno type="RBID">Pascal:14-0099356</idno>
<idno type="wicri:Area/Main/Corpus">000012</idno>
<idno type="wicri:Area/Main/Repository">000155</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term>
<term>Binary compounds</term>
<term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Inorganic compounds</term>
<term>Quantum dots</term>
<term>Reflection spectrum</term>
<term>Semiconductor materials</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Point quantique</term>
<term>Spectre réflexion</term>
<term>Anisotropie</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur</term>
<term>Composé binaire</term>
<term>Arséniure de gallium</term>
<term>As In</term>
<term>InAs</term>
<term>As Ga</term>
<term>GaAs</term>
<term>Composé minéral</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The aim of this work is to influence quantum dot (QD) formation by improving the lower and upper InAs/GaAs QD interface quality. QD properties were studied by reflectance anisotropy spectroscopy, atomic force microscopy and high resolution transmission electron microscopy. All structures were prepared by low pressure metal organic vapor phase epitaxy. Concerning the lower interface, a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. Therefore the growth conditions of the QD buffer layer are very important. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. The upper QD interface is formed during the covering process. InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atoms in covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. However, enhanced surfacting of In atoms was observed for GaAsSb SRL. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0>
</fA01>
<fA03 i2="1"><s0>Appl. surf. sci.</s0>
</fA03>
<fA05><s2>301</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>HOSPODKOVA (Alice)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PANGRAC (Jiří)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ZIKOVA (Markéta)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>OSWALD (Jiří)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>VYSKOCIL (Jan)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KOMNINOU (Philomela)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>KIOSEOGLOU (Joseph)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>FLORINI (Nikoleta)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>HULICIUS (Eduard)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Physics AS CR, v. v. i., Cukrovamická 10</s1>
<s2>162 00 Prague 6</s2>
<s3>CZE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Physics, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA20><s1>173-177</s1>
</fA20>
<fA21><s1>2014</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000500434550260</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>19 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0099356</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The aim of this work is to influence quantum dot (QD) formation by improving the lower and upper InAs/GaAs QD interface quality. QD properties were studied by reflectance anisotropy spectroscopy, atomic force microscopy and high resolution transmission electron microscopy. All structures were prepared by low pressure metal organic vapor phase epitaxy. Concerning the lower interface, a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. Therefore the growth conditions of the QD buffer layer are very important. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. The upper QD interface is formed during the covering process. InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atoms in covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. However, enhanced surfacting of In atoms was observed for GaAsSb SRL. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Spectre réflexion</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Reflection spectrum</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Espectro reflexión</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Anisotropie</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Anisotropy</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>17</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>17</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>34</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>35</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>62</s5>
</fC03>
<fN21><s1>139</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000155 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000155 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:14-0099356
   |texte=   Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri